{"id":14,"date":"2016-04-01T11:28:47","date_gmt":"2016-04-01T19:28:47","guid":{"rendered":"http:\/\/research.engineering.ucdavis.edu\/chowdhury\/?page_id=14"},"modified":"2018-02-06T01:32:37","modified_gmt":"2018-02-06T09:32:37","slug":"patents","status":"publish","type":"page","link":"https:\/\/research.engineering.ucdavis.edu\/chowdhury\/patents\/","title":{"rendered":"Patents"},"content":{"rendered":"\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
 <\/td>\nIssued Patents PAT. NO<\/td>\nApplication No. (for filed patents)<\/td>\nTitle<\/td>\nDate of Issue or filing (as applicable)<\/td>\n<\/tr>\n
1<\/p>\n

2<\/td>\n

9,520,491<\/p>\n

9,171,730<\/td>\n

 <\/td>\nElectrodes for semiconductor devices and methods of forming the same<\/td>\nDecember 13, 2016<\/p>\n

Oct 27, 2015<\/td>\n<\/tr>\n

3<\/p>\n

4<\/td>\n

9,224,805<\/p>\n

8,901,604<\/td>\n

 <\/td>\nSemiconductor devices with guard rings<\/td>\nDecember 29, 2015<\/p>\n

December 2, 2014<\/td>\n<\/tr>\n

5<\/td>\n9,184,275<\/td>\n <\/td>\nSemiconductor devices with integrated hole collectors<\/td>\nNovember 10, 2015<\/td>\n<\/tr>\n
6<\/p>\n

7<\/p>\n

8<\/td>\n

9,443,849<\/p>\n

9,171,910<\/p>\n

8,803,246<\/td>\n

 <\/td>\nSemiconductor electronic components with integrated current limiters<\/td>\nSeptember 13, 2016<\/p>\n

October 27, 2015<\/p>\n

August 12, 2014<\/p>\n

 <\/td>\n<\/tr>\n

9<\/p>\n

10<\/td>\n

9,171,836<\/p>\n

8,860,495<\/td>\n

 <\/td>\nMethod of forming electronic components with increased reliability<\/td>\nOctober 27, 2015<\/p>\n

October 14, 2014<\/td>\n<\/tr>\n

11<\/p>\n

12<\/p>\n

13<\/td>\n

9,437,707<\/p>\n

9,147,760<\/p>\n

8,742,460<\/td>\n

 <\/td>\nTransistors with isolation region<\/td>\nSeptember 6, 2016<\/p>\n

September 29, 2015<\/p>\n

June 3, 2014<\/td>\n<\/tr>\n

14<\/p>\n

15<\/td>\n

9,490,324<\/p>\n

9,093,366<\/td>\n

 <\/td>\nN-polar III-nitride transistors<\/td>\nNovember 8, 2016<\/p>\n

July 28, 2015<\/td>\n<\/tr>\n

16<\/td>\n8,937,338<\/td>\n <\/td>\nCurrent aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer<\/td>\nJanuary 20, 2015<\/td>\n<\/tr>\n
17<\/td>\n8,598,937<\/td>\n <\/td>\nHigh power semiconductor electronic components with increased reliability<\/td>\nDecember 3, 2013<\/p>\n

 <\/td>\n<\/tr>\n

18<\/td>\n9,443,93<\/td>\n <\/td>\nIII-nitride transistor including a p-type depleting layer<\/td>\nSeptember 13, 2016<\/p>\n

 <\/td>\n<\/tr>\n

19<\/p>\n

 <\/p>\n

 <\/td>\n

Application<\/td>\nApplication #20170229569PCT\/US2015\/032019<\/td>\nIII-nitride based n polar vertical tunnel transistor<\/td>\nMay 21, 2015<\/td>\n<\/tr>\n
20<\/td>\nApplication<\/td>\nPublication number:\u00a020170200833<\/td>\nThree dimensional vertically structured MISFET\/MESFET<\/td>\nJanuary 7, 2016<\/td>\n<\/tr>\n
21<\/td>\nApplication<\/td>\nPublication number: 20170125574<\/td>\nTrenched vertical power field-effect transistors with improved on-resistance and breakdown voltage<\/td>\nNovember 4, 2016<\/td>\n<\/tr>\n
22<\/td>\nApplication<\/td>\nPublication number:\u00a020170330746<\/p>\n

 <\/td>\n

Phosphorus Incorporation for N-Type Doping of Diamond with (100) and Related Surface Orientation<\/td>\n\u00a0May 10, 2016<\/p>\n

 <\/td>\n<\/tr>\n

23<\/td>\nPatent filed, Pending Publication<\/td>\nPCT\/US2017\/032253<\/td>\nIII-nitride Vertical Transistor with Aperture Region Formed Using Ion Implantation as a Path to Achieve Selective Area Doping<\/td>\nMay 11, 2017<\/td>\n<\/tr>\n
24<\/td>\nPatent filed, Pending Publication<\/td>\n <\/td>\nDiamond Based Current Aperture Vertical Transistor and Methods of Making and Using the Same<\/td>\nNovember 28, 2017<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

  Issued Patents PAT. NO Application No. (for filed patents) Title Date of Issue or filing (as applicable) 1<\/p>\n

2 9,520,491<\/p>\n

9,171,730   Electrodes for semiconductor devices and methods of forming the same December 13, 2016<\/p>\n

Oct 27, 2015 3<\/p>\n

4 9,224,805<\/p>\n

8,901,604   Semiconductor devices with guard rings December \u2026 Continue reading → <\/span><\/a><\/p>\n","protected":false},"author":10,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-14","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/research.engineering.ucdavis.edu\/chowdhury\/wp-json\/wp\/v2\/pages\/14","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/research.engineering.ucdavis.edu\/chowdhury\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/research.engineering.ucdavis.edu\/chowdhury\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/research.engineering.ucdavis.edu\/chowdhury\/wp-json\/wp\/v2\/users\/10"}],"replies":[{"embeddable":true,"href":"https:\/\/research.engineering.ucdavis.edu\/chowdhury\/wp-json\/wp\/v2\/comments?post=14"}],"version-history":[{"count":3,"href":"https:\/\/research.engineering.ucdavis.edu\/chowdhury\/wp-json\/wp\/v2\/pages\/14\/revisions"}],"predecessor-version":[{"id":217,"href":"https:\/\/research.engineering.ucdavis.edu\/chowdhury\/wp-json\/wp\/v2\/pages\/14\/revisions\/217"}],"wp:attachment":[{"href":"https:\/\/research.engineering.ucdavis.edu\/chowdhury\/wp-json\/wp\/v2\/media?parent=14"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}