| Issued Patents PAT. NO | Application No. (for filed patents) | Title | Date of Issue or filing (as applicable) | |
| 1
2 |
9,520,491
9,171,730 |
Electrodes for semiconductor devices and methods of forming the same | December 13, 2016
Oct 27, 2015 |
|
| 3
4 |
9,224,805
8,901,604 |
Semiconductor devices with guard rings | December 29, 2015
December 2, 2014 |
|
| 5 | 9,184,275 | Semiconductor devices with integrated hole collectors | November 10, 2015 | |
| 6
7 8 |
9,443,849
9,171,910 8,803,246 |
Semiconductor electronic components with integrated current limiters | September 13, 2016
October 27, 2015 August 12, 2014
|
|
| 9
10 |
9,171,836
8,860,495 |
Method of forming electronic components with increased reliability | October 27, 2015
October 14, 2014 |
|
| 11
12 13 |
9,437,707
9,147,760 8,742,460 |
Transistors with isolation region | September 6, 2016
September 29, 2015 June 3, 2014 |
|
| 14
15 |
9,490,324
9,093,366 |
N-polar III-nitride transistors | November 8, 2016
July 28, 2015 |
|
| 16 | 8,937,338 | Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer | January 20, 2015 | |
| 17 | 8,598,937 | High power semiconductor electronic components with increased reliability | December 3, 2013
|
|
| 18 | 9,443,93 | III-nitride transistor including a p-type depleting layer | September 13, 2016
|
|
| 19
|
Application | Application #20170229569PCT/US2015/032019 | III-nitride based n polar vertical tunnel transistor | May 21, 2015 |
| 20 | Application | Publication number: 20170200833 | Three dimensional vertically structured MISFET/MESFET | January 7, 2016 |
| 21 | Application | Publication number: 20170125574 | Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage | November 4, 2016 |
| 22 | Application | Publication number: 20170330746
|
Phosphorus Incorporation for N-Type Doping of Diamond with (100) and Related Surface Orientation | May 10, 2016
|
| 23 | Patent filed, Pending Publication | PCT/US2017/032253 | III-nitride Vertical Transistor with Aperture Region Formed Using Ion Implantation as a Path to Achieve Selective Area Doping | May 11, 2017 |
| 24 | Patent filed, Pending Publication | Diamond Based Current Aperture Vertical Transistor and Methods of Making and Using the Same | November 28, 2017 |