Patents

  Issued Patents PAT. NO Application No. (for filed patents) Title Date of Issue or filing (as applicable)
1

2

9,520,491

9,171,730

  Electrodes for semiconductor devices and methods of forming the same December 13, 2016

Oct 27, 2015

3

4

9,224,805

8,901,604

  Semiconductor devices with guard rings December 29, 2015

December 2, 2014

5 9,184,275   Semiconductor devices with integrated hole collectors November 10, 2015
6

7

8

9,443,849

9,171,910

8,803,246

  Semiconductor electronic components with integrated current limiters September 13, 2016

October 27, 2015

August 12, 2014

 

9

10

9,171,836

8,860,495

  Method of forming electronic components with increased reliability October 27, 2015

October 14, 2014

11

12

13

9,437,707

9,147,760

8,742,460

  Transistors with isolation region September 6, 2016

September 29, 2015

June 3, 2014

14

15

9,490,324

9,093,366

  N-polar III-nitride transistors November 8, 2016

July 28, 2015

16 8,937,338   Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer January 20, 2015
17 8,598,937   High power semiconductor electronic components with increased reliability December 3, 2013

 

18 9,443,93   III-nitride transistor including a p-type depleting layer September 13, 2016

 

19

 

 

Application Application #20170229569PCT/US2015/032019 III-nitride based n polar vertical tunnel transistor May 21, 2015
20 Application Publication number: 20170200833 Three dimensional vertically structured MISFET/MESFET January 7, 2016
21 Application Publication number: 20170125574 Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage November 4, 2016
22 Application Publication number: 20170330746

 

Phosphorus Incorporation for N-Type Doping of Diamond with (100) and Related Surface Orientation  May 10, 2016

 

23 Patent filed, Pending Publication PCT/US2017/032253 III-nitride Vertical Transistor with Aperture Region Formed Using Ion Implantation as a Path to Achieve Selective Area Doping May 11, 2017
24 Patent filed, Pending Publication   Diamond Based Current Aperture Vertical Transistor and Methods of Making and Using the Same November 28, 2017

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