Publications

Guest Editor

  1. S. Chowdhury, T.Palacios, G.Xing, Topical section in physica status solidi a Compound Semiconductors pss (a) – applications and materials science, 2018
  2. A. Doolittle, T. Palacios, S. Keller, S. Rajan, D. Feezell, J. Wierer, S. Chowdhury, and S.-C. Shen, “Nitride Semiconductors,” Status Solidi Basic Res., vol. 254, no. 8, 2017

 Book Chapters and Newsletter

  1. Gallium Nitride enabled High Frequency and High Efficiency Power Conversion Springer [to be published by the end of 2018] Edited by: M. Meneghini, G. Meneghesso, E. Zanoni
  2. Handbook of GaN Semiconductor Materials and Devices. Boca Raton: CRC Press, 2018 Chapter 10: Power Conversion and the Role of GaN- Srabanti Chowdhury [link] Edited By: Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen
  3. Power GaN Devices: materials applications and reliability, Springer, 2016 Chapter 5: Vertical Gallium Nitride Technology, Srabanti Chowdhury Pages 101-121 [link] Edited by M. Meneghini, G. Meneghesso, E. Zanoni
  4. GaN Electronics for Next Generation Cars, Srabanti Chowdhury, IEEE Transportation, Electrification Community, November/December 2014 [Newsletter]

Journal Papers

  1. D. Ji, Wenwen Li, and Srabanti Chowdhury, “A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs,” IEEE Transactions on Electron Devices, vol. 64, no. 9, pp. 4271-4275, Sept. 2018
  2. D. Ji, Wenwen Li, Anchal Agarwal, Silvia H. Chan, Jeffrey Haller, Davide Bisi, Michelle Labrecque, Chirag Gupta, Bill Cruse, Rakesh Lal, Stacia Keller, Umesh K. Mishra, and Srabanti Chowdhury, “Improved Dynamic Ron of GaN vertical trench MOSFETs Using TMAH Wet Etch,” IEEE Electron Device Letters, vol. 39, no. 7, July. 2018
  3. D. Ji, Anchal Agarwal, Haoran Li, Wenwen Li, Stacia Keller, and Srabanti Chowdhury, “880V/2.7 mΩ· cm2 MIS Gate Trench CAVET on Bulk GaN Substrates,” IEEE Electron Device Letters, vol. 39, no. 6, pp. 863-865, June. 2018
  4. D. Ji, Chirag Gupta, Anchal Agarwal, Silvia H. Chan, Cory Lund, Wenwen Li, Stacia Keller, Umesh K. Mishra, and S. Chowdhury, “Large Area Normally Off In-Situ Oxide, GaN Interlayer Based Vertical Trench MOSFET (OG-FET),” IEEE Electron Device Letters, vol. 39, no. 5, pp. 711-715, May. 2018
  5. J. Gao, M. Hao, W. Li, Z. Xu, S. Mandal, R. Nemanich, and S. Chowdhury, “Al2O3 Insertion Layer for Improved PEALD SiO2 /AlGaN Interfaces”, Phys. Status Solidi Appl. Mater. Sci., p. 1700498, 2018
  6. J.Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, et al., “Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges”, Adv. Electron. Mater., vol. 4, no. 1, 1600501, 2018
  7. D. Ji, A. Agarwal, W. Li, S. Keller, and S. Chowdhury, “Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation”, IEEE Trans. Electron Devices, pp. 483-487, 2018.
  8. S. Zhao, J. Gao, S. Wang, H. Xie, F. A. Ponce, S. Goodnick, and S. Chowdhury, “Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air”, Jpn. J. Appl. Phys., vol. 56, no. 12, pp. 126502, 2017.
  9. W. Li, D. Ji, R. Tanaka, S. Mandal, M. Laurent, and S. Chowdhury, “Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process”, IEEE J. Electron Devices Soc., vol. 5, no. 6, pp 485-490, 2017.
  10. M. Dutta, F. A. M. Koeck, W. Li, R. J. Nemanich, and S. Chowdhury, “High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates”, IEEE Electron Device Lett., vol. 38, no. 5, pp. 600-603, 2017.
  11. D. Ji, M. A. Laurent, A. Agarwal, W. Li, S. Mandal, S. Keller, and S. Chowdhury, “Normally off Trench CAVET with Active Mg-Doped GaN as Current Blocking Layer”, IEEE Trans. Electron Devices, vol. 64, no. 3, pp 805-808, 2017.
  12. Y. Yang, F. A. Koeck, M. Dutta, X. Wang, S. Chowdhury, and R. J. Nemanich, “Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivityJ. Appl. Phys., vol. 122, no. 15, pp.155304, 2017.
  13. M. Saremi, R. Hathwar, M. Dutta, F. A. M. Koeck, R. J. Nemanich, S. Chowdhury, and S. M. Goodnick, “Analysis of the reverse I-V characteristics of diamond-based PIN diodes”, Appl. Phys. Lett., vol. 111, no. 4, pp. 043507, 2017.
  14. S. Mandal, A. Agarwal, E. Ahmadi, K. M. Bhat, D. Ji, M. A. Laurent, S. Keller, and S. Chowdhury, “Dispersion free 450-V p GaN-gated CAVETs with Mg-ion implanted blocking layer”, IEEE Electron Device Lett., vol. 38, no. 7, pp. 933-936, 2017.
  15. A. Kaya, H. Mao, J. Gao, R. V. Chopdekar, Y. Takamura, S. Chowdhury, and M. S. Islam, “An Investigation of Electrical and Dielectric Parameters of Sol-Gel Process Enabled β-Ga2O3 as a Gate Dielectric Material”, IEEE Trans. Electron Devices, vol. 64, no. 5, pp. 2047-2053, 2017.
  16. R. Soligo, F. Sabatti, S. Chowdhury, and M. Saraniti, “Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations”, IEEE Trans. Electron Devices, vol. 64, no. 11, pp.4442-4449, 2017.
  17. C.Gupta, D. Ji, S. H. Chan, A. Agarwal, W. Leach, S. Keller, S. Chowdhury, and U. K. Mishra, “Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs”, IEEE Electron Device Lett., vol. 38, no. 11, pp.1559-1562, 2017.
  18. D. Ji, Y. Yue, J. Gao, and S. Chowdhury, “Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET”, IEEE Trans. Electron Devices, vol. 63, no. 10, pp. 4011-4017, 2016.
  19. S. Zhao, H. McFavilen, S. Wang, F. A. Ponce, C. Arena, S. Goodnick, and S. Chowdhury, “Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air”, J. Electron. Mater., vol. 45, no. 4, pp. 2087-2091, 2016.
  20. R. Hathwar, M. Dutta, F. A. M. Koeck, R. J. Nemanich, S. Chowdhury, and S. M. Goodnick, “Temperature dependent simulation of diamond depleted Schottky PIN diodes”, J. Appl. Phys., vol. 119, no. 22, pp. 225703, 2016.
  21. M. Dutta, F. A. M. Koeck, R. Hathwar, S. M. Goodnick, R. J. Nemanich, and S. Chowdhury, “Demonstration of Diamond-Based Schottky p-i-n Diode with Blocking Voltage >500 V”, IEEE Electron Device Lett., vol. 37, no. 9, pp.1170-1173, 2016.
  22. W. Li and S. Chowdhury, “Design and fabrication of a 1.2 kV GaN-based MOS vertical transistor for single chip normally off operation”, Phys. Status Solidi Appl. Mater. Sci., vol. 213, no. 10, pp. 2714-2720, 2016.
  23. R. Soligo, S. Chowdhury, G. Gupta, U. Mishra, and M. Saraniti, “The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor”, IEEE Electron Device Lett., vol. 36, no. 7, pp. 669-671, 2015.
  24. [Invited] S. Chowdhury, “Low loss power conversion with Gallium nitride based devicesECS Transactions, vol. 66, no. 1, pp. 67-77, 2015
  25. [Invited] S. Chowdhury, “Gallium nitride based power switches for next generation of power conversion”, Phys. Status Solidi Appl. Mater. Sci., vol. 212, no. 5, pp. 1066-1074, 2015 * Special edition celebrating Nobel Prize in Physics for physica status solidi authors Isamu Akasaki, Hiroshi Amano and Shuji Nakamura
  26. D. Ji and S. Chowdhury, “Design of 1.2 kV Power Switches with Low RON Using GaN-Based Vertical JFET”, IEEE Trans. Electron Devices, vol. 62, no. 8, pp. 2571-2578, 2015.
  27. R. Yeluri, J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, “Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction”, Appl. Phys. Lett., vol. 106, no. 18, pp. 183502, 2015.
  28. [Invited] S. Chowdhury and U. K. Mishra, “Lateral and vertical transistors using the Algan/GAN Heterostructure”, IEEE Trans. Electron Devices, vol. 60, no. 10, pp.3060-3066, 2013.
  29. [Invited] S. Chowdhury, B. L. Swenson, M. H. Wong, and U. K. Mishra, “Current status and scope of gallium nitride-based vertical transistors for high-power electronics application”, Semicond. Sci. Technol., vol. 28, no. 7, pp. 074014, 2013. Editorial pick for 2013.
  30. S. Chowdhury, M. H. Wong, B. L. Swenson, and U. K. Mishra, “CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion”, IEEE Electron Device Lett., vol. 33, no. 1, pp. 41-43, 2012.
  31. S. Keller, Y. Dora, S. Chowdhury, F. Wu, X. Chen, S. P. Denbaars, J. S. Speck, and U. K. Mishra, “Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon”, Phys. Status Solidi C, vol. 8, no. 8, pp. 2086-2088, 2011.
  32. S. Chowdhury, B. L. Swenson, J. Lu, and U. K. Mishra, “Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers”, Jpn. J. Appl. Phys., vol. 50, no. 10R, pp. 101002, 2011.
  33. L. Gordon, M.-S. Miao, S. Chowdhury, M. Higashiwaki, U. K. Mishra, and C. G. Van De Walle, “Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions”, J. Phys. D. Appl. Phys., vol. 43, no. 50, pp. 505501, 2010.
  34. M. Higashiwaki, S. Chowdhury, B. L. Swenson, and U. K. Mishra, “Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures”, Appl. Phys. Lett., vol. 97, no. 22, pp. 222104, 2010.
  35. S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdury, S. P. Denbaars, J. S. Speck, and U. K. Mishra, “Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition”, Appl. Phys. Lett., vol. 97, no. 14, pp.142109, 2010.
  36. M. Higashiwaki, S. Chowdhury, M.-S. Miao, B. L. Swenson, C. G. Van De Walle, and U. K. Mishra, “Distribution of donor states on etched surface of AlGaN/GaN heterostructures,” J. Appl. Phys, vol. 108, no. 6, pp. 063719, 2010.
  37. S. Chowdhury, B. L. Swenson, and U. K. Mishra, “Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer”, IEEE Electron Device Lett., vol. 29, no. 6, pp. 543-545, 2008.

Proceedings Papers 

  1. S. Mandal, A. Agarwal, E. Ahmadi, K. Mahadeva Bhat, M. A. Laurent, S. Keller, and S. Chowdhury, “Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer”, Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 1038108, 2017
  2. J. Gao, W. Li, S. Mandal, and S. Chowdhury, “A study of the effect of surface pretreatment on atomic layer deposited Al2O3interface with GaN”, Proc. SPIE 10381, Wide Bandgap Power Devices and Applications II, 1038103, 2017.
  3. D. Ji, W. Li, and S. Chowdhury, “Potential of GaN vertical JFETs presented through a comprehensive discussion of dynamic performance compared to SiC JFETs”, 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, 2016.
  4. A. Kaya, J. Gao, H. Cansizoglu, A. S. Mayet, H. H. Mamtaz, S. Ghandiparsi, S. Chowdhury, and M. S. Islam, “Ga2O3as both gate dielectric and surface passivation via sol-gel method at room ambient”, Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 995709, 2016 . doi 10.1117/12.2239177
  5. D. Ji and S. Chowdhury, “A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application”, 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 2015

Conference Presentations (Invited)

  1. “GaN vertical technology and its future”, AVS 65th International Symposium & Exhibition, Long Beach, California, USA, October 2018
  2. “Progress in GaN-based vertical device development for high power applications”, Government Microcircuit Applications and critical technology conference (GOMACTECH), Miami Florida, USA, March 2018
  3. “Vertical GaN transistors for Power switching application”, ISPlasma, Nagoya, Japan, March 2018
  4. “A review of GaN’s role in emerging electronics (Power electronics)”, XIX International Workshop on The Physics of Semiconductor Devices (IWPSD), Delhi, India December 2017
  5. “Recent achievements and pending challenges in Gallium Nitride vertical device development”, International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, September 2017
  6. “Newly evolving wide bandgap devices for power electronics (Bulk GaN and Diamond)”, Topical Workshop on Heterostructure Microelectronics (TWHM), Kagoshima, Japan, August 2017
  7. “Diamond based transistors and diodes for high power application”, Workshop on Ultra-Precision Processing of Widebandgap Semiconductors, WUPP, Monterey, California, November, 2017
  8. “Role of Wide Bandgap Semiconductors in Next-Generation Power Converters”, COMPASS, Half moon Bay, California, USA, October 2017
  9. “A Roadmap of Next-Generation Power Devices With Gallium Nitride”, SURGE Silicon Valley (Silvaco), Santa Clara, California, USA, September 2017
  10. “On n-type diamond devices”, International Symposium on Compound Semiconductors (ISCS), Berlin, Germany, May, 2017
  11. “A Roadmap beyond Si Power Electronics Enabled by Wide Bandgap Materials”, Material Research Society Meeting, Boston, Massachusetts, USA, November, 2016
  12. “Role of wide bandgap semiconductors in next generation power converters”, SPIE, Optics + Photonics, San Diego, California, USA, August, 2016
  13. “Electronics for harsh environment sensing: possibilities with GaN and diamond, SPIE Defense + Commercial sensing”, Baltimore, Maryland, USA, March 2016
  14. “Wide bandgap and ultra-wide bandgap devices for Power conversion”, Material Research Outreach Program, Santa Barbara, California, USA, February, 2016
  15. “Power Conversion with Gallium Nitride Devices”, SPIE Photonics West, San Francisco, California, USA, January, 2016
  16. “Recent developments in power electronic devices using GaN and Diamond”, Electro Chemical Society (ECS) Symposium, Phoenix, Arizona, USA, October 2015
  17. “Low Loss Power Conversion Enabled By Gallium Nitride Based Devices”, 227th Electro Chemical Society (ECS) meeting, Chicago, Illinois, USA, May, 2015
  18. “Gallium Nitride and other emerging semiconductors for next generation power conversion” Invited SSEL seminar at University of Michigan, Ann Arbor, Michigan, USA, November, 2014
  19. “GaN based power electronic devices for next generation power conversion”, The International Workshop on Nitride Semiconductors (IWN), Wroclaw, Poland, August 2014
  20. “GaN based devices offers efficient power conversion for the next generation automotive application”, IEEE Lecture series – Transportation Electrification, ASU, Tempe, Arizona, USA April 2014
  21. “GaN switches offer the next generation power conversion solution”, International Semiconductor Device Research Symposium (ISDRS), College Park, Maryland, USA, December 2013
  22. “Current Status of GaN-based Power Electronic Devices and their Fabrication Challenges”, Plasma-Therm Symposium, Stanford, California, USA, September, 2013
  23. “Lateral and Vertical Power Devices in Gallium Nitride”, Topical Workshop on Heterostructure Microelectronics (TWHM), Gifu, Japan, 2011
  24. Tutorial on power electronics at ESSDERC/ESSCIRC Conference, Lausanne, Switzerland, 2016

Conference Presentations (refereed)

  1. D. Ji, Wenwen Li, and Srabanti Chowdhury, “Switching Performance Analysis of GaN OG-FET Using TCAD Device-Circuit Integrated Model,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), May, Chicago, IN, pp. 208-211.
  2. Raghuraj Hathwar, Maitreya Dutta, Franz A. M. Koeck, Mehdi Saremi, Srabanti Chowdhury, and Stephen M. Goodnick, Robert J. Nemanich, “V2 Diode Current Density Indicating a High Current Regime for Schottky-PIN Diamond Diodes”, Hasselt Diamond workshop XXII, Hasselt, Belgium, March 2017
  3. Dong Ji, Wenwen Li and Srabanti Chowdhury, “Switching Performance Analysis of GaN OG-FET Using TCAD Device-Circuit-Integrated Model”, International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, Illinois, USA, May 2018
  4. Ji, Chirag Gupta, S. H. Chan, A. Agarwal, W. Li, S. Keller, U. K. Mishra and S. Chowdhury, “Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices”, International Electron Devices Meeting (IEDM), San Francisco, California, December 2017
  5. Saba Rajabi, Saptarshi Mandal, Haoran Li, Matthew A. Laurent, Stacia Keller, Srabanti Chowdhury, “III-nitride based N-polar current aperture vertical electron transistors”, SPIE (Optics+ Photonics), San Diego, California, August 2017
  6. Saptarshi Mandal, Anchal Agarwal, Elaheh Ahmadi, K. Mahadeva Bhat, Matthew A. Laurent, Stacia Keller, Srabanti Chowdhury, “Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer”, SPIE (Optics+ Photonics), San Diego, California, August 2017
  7. Jianyi Gao, Wenwen Li, Saptarshi Mandal, Srabanti Chowdhury, “A study of the effect of surface pretreatment on atomic layer deposited Al2O3interface with GaN”, SPIE (Optics+ Photonics), San Diego, California, August 2017
  8. 7.     Dong Ji , Chirag Gupta, Anchal Agarwal , Silvia H. Chan , Cory Lund , Wenwen Li , Matthew A. Laurent , Stacia Keller , Umesh K. Mishra , Srabanti Chowdhury, “First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)”, Device Research Conference (DRC), South Bend, Indiana , June 2017
  9. Jianyi Gao , Ahmet Kaya , Rajesh V. Chopdekar , Daniel M. Dryden , Yayoi Takamura , M. Saif Islam , Srabanti Chowdhury, “Characterization of β-Ga2O3 interface and conduction band offset with GaN using a Sol-gel process of deposition”, Device Research Conference (DRC) , South Bend, Indiana , June 2017
  10. Harshad Surdi, Maitreya Dutta, Srabanti Chowdhury, Electronics Materials Conference (EMC), “Demonstration of H-Terminated Single Crystal Diamond Hole-Channel MESFET with ~40mA/mm and 121 kV/cm”, South Bend, Indiana, June 2017
  11. Jianyi Gao, Yuanzheng Yue, Mei Hao, Wenwen Li, Dong Ji, Robert Nemanich and Srabanti Chowdhury, “High Breakdown, Low Interface State PEALD Al2O3/SiO2 Gate Stack for AlGaN/GaN MOS-HEMT”, International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, October 2016,
  12. Dong Ji, Matthew A. Laurent, Anchal Agarwal, Stacia Keller, Umesh K. Mishra and Srabanti Chowdhury, “Demonstration of Normally off GaN Trench-CAVET for High Power Application”, International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, October 2016
  13. Yuangzheng Yue, Jianyi Gao, Saptarshi Mandal, Shirong Zhao, Dong Ji, Wenwen Li and Srabanti Chowdhury, “GaN-on-Si Power HEMTs with Blocking Field >70V/μm”, International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, October 2016.
  14. Saptarshi Mandal, Anchal Agarwal, Elaheh Ahmadi, Matthew Laurent, Stacia Keller, Mahadeva Bhat K, Wenwen Li, Dong Ji, Umesh K. Mishra and Srabanti Chowdhury, “pGaN Gate CAVET with Mg Ion-Implanted Current Blocking Layer Demonstrating a Blocking Voltage over 500V”, International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, October 2016
  15. Wenwen Li, Ryo Tanaka, Saptarshi Mandal, Matthew Laurent and Srabanti Chowdhury, “Design and Fabrication of Self-Aligned GaN Static Induction Transistors”, International Workshop on Nitride Semiconductors (IWN), Orlando, Florida, October 2016
  16. Fetene M. Yigletu, Dong Ji and Srabanti Chowdhury, International Workshop on Nitride Semiconductors (IWN), “On the Compact Modeling of CAVETs for Circuit Simulation”, Orlando, Florida, October 2016
  17. Dong Ji, Wenwen Li and Srabanti Chowdhury, “Potential of GaN vertical JFETs presented through a comprehensive discussion of dynamic performance compared to SiC JFETs”, Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2016, Fayetteville, Arkansas.
  18. Maitreya Dutta, Franz Koeck, Raghuraj HathwaR, Stephen Goodnick, Robert J. Nemanich, and Srabanti Chowdhury, “Diamond Based Diodes for High Voltage and High Temperature Applications”, MRS Spring Meeting, Phoenix, Arizona, USA, 2016
  19. Franz A. Koeck, Maitreya Dutta, Srabanti Chowdhury, and Robert J. Nemanich, “Doped Diamond Homoepitaxy on (100) Substrates for High Power p-i-n Diodes”, MRS Spring Meeting, Phoenix, Arizona, USA, 2016
  20. Raghuraj Hathwar, Maitreya Dutta, Franz A. Koeck, Robert J. Nemanich, Srabanti Chowdhury, and Stephen Goodnick, “Simulation of Diamond PNP Bipolar Junction Transistors”, MRS Spring Meeting, Phoenix, Arizona, USA, 2016
  21. Dong Ji and Srabanti Chowdhury, IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), “A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application,” Blacksburg, Virginia, USA, 2015
  22. Dong Ji and Srabanti Chowdhury, “A Comprehensive Study of the Design Space to Achieve 1.2kV GaN-based Vertical JFET with Low Ron”, International Symposium on Compound Semiconductors (ISCS), Santa Barbara, California, USA, 2015
  23. Wenwen Li and Srabanti Chowdhury, “Design of a 1.2kV GaN MOSVFET for Single Chip Normally-off Operation”, International Symposium on Compound Semiconductors (ISCS), Santa Barbara, California, USA, 2015
  24. Shirong Zhao, Heather McFavilen, Shuo Wang, Fernando Ponce, Chantal Arena, Stephen Goodnick and Srabanti Chowdhury, “High Temperature Contacts to p-GaN and n-GaN for Topping cell InGaN Photovoltaic Devices”, Electronic Materials Conference (EMC), Columbus, Ohio, USA, 2015
  25. Srabanti Chowdhury, “GaN-based vertical devices for power switching application”, WOCSEMMAD, Isle of Palms, South Carolina, USA, 2015
  26. Wenwen Li and Srabanti Chowdhury, “Design of a 1.2 kV GaN-based MOS vertical transistor for single chip normally-off operation”, WOCSEMMAD, Isle of Palms, South Carolina, USA, 2015”
  27. Maitreya Dutta, Franz A.M. Koeck, Raghuraj Hathwar, Saptarshi Mandal, Stephen M. Goodnick, Robert J. Nemanich, and Srabanti Chowdhury, “Development of Low-Resistance Contacts to Phosphorus Doped Diamond”, WOCSEMMAD, Isle of Palms, South Carolina, USA, 2015”
  28. Srabanti Chowdhury, Don Kebort, Jesus Magadia, Dietrich Graumann, Nick Fichtenbaum, Jim Honea, Yifeng Wu, Primit Parikh and Umesh K Mishra, “First demonstration of high performance 1kV AlGaN/GaN HEMTs on Si and their use in the drive of both an induction motor and a permanent magnet motor”, The International Workshop on Nitride Semiconductors (IWN), Sapporo Japan, 2012
  29. Masataka Higashiwaki, Srabanti Chowdhury, Brian L. Swenson and Umesh K. Mishra, “Study of Thermal Oxidation Effects on Surface Barrier Height of AlGaN/GaN Heterostructures”, The International Workshop on Nitride Semiconductors (IWN), Florida, USA, 2010
  30. Stacia Keller, Yuvaraj Dora, Srabanti Chowdhury, Feng Wu, Xu Chen, Steven P. DenBaars, James S. Speck, and Umesh K. Mishra, “Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon”, The International Workshop on Nitride Semiconductors (IWN), Florida, USA, 2010
  31. Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson and Umesh K. Mishra, “Dispersion-free AlGaN/GaN CAVET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer”, Device Research Conference (DRC), South Bend, Indiana, USA, 2010
  32. Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson and Umesh K. Mishra, “Low on resistance AlGaN/GaN Current Aperture Vertical Electron Transistors achieved with MBE regrown channels to suppress Mg diffusion from Current Blocking Layers”, International Symposium on Compound Semiconductors (ISCS), Takamatsu, Japan, 2010
  33. Srabanti Chowdhury, Masataka Higashiwaki, Maosheng Miao, Brian L. Swenson, Chris G. Van de Walle, and Umesh K. Mishra, “Estimation of surface barrier height of etched AlGaN barrier in AlGaN/GaN heterostructures”, International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, 2009
  34. Srabanti Chowdhury, Brian L. Swenson, Stacia Keller and Umesh K. Mishra, “Investigation of Mg Ion-Implanted GaN as Current Blocking Layer in a CAVET”, Electronic Materials Conference (EMC), Penn State, USA, 2009
  35. Srabanti Chowdhury, Brian L. Swenson, Chang Soo Suh, Yuvaraj Dora, Stacia Keller and Umesh K. Mishra, “AlGaN/GaN HEMT and CAVET for high voltage switching application”, Government Microcircuit Applications and critical technology conference (GOMACTech), Orlando, USA, 2009
  36. Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars and Umesh K. Mishra, “AlGaN/GaN CAVET on GaN Substrates with Al Ion Implanted Current Blocking Layer”,, The International Workshop on Nitride Semiconductors (IWN), Montreux, Switzerland, 2008
  37. Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars, and Umesh K. Mishra, “Depletion and Enhancement mode AlGaN/GaN CAVET with Al ion implanted current blocking layer”, International Symposium on Compound Semiconductors (ISCS), Rust, Germany, 2008
  38. Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars and Umesh K. Mishra, “Depletion and Enhancement mode AlGaN/ GaN CAVET”, Electronic Materials Conference (EMC), Santa Barbara, USA, 2008
  39. Kallol Bhattacharya, Srabanti Chowdhury, Shirsha Bhajan, Dipankar Biswas, and Krishnendu Goswami, “Storage, Transmission and Recognition of alphabets and words with enhanced compression”, International Conference on Computers and Devices for Communication (CODEC), Kolkata, India, 2004
  40. Srabanti Chowdhury, Shirsha Bhajan and D. Biswas, “Unique representation of a binary image through a set of numbers”, Horizons of Telecommunication (HOT), Kolkata, India, 2003

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